zowie technology corporation general purpose transistor npn silicon halogen-free type lead free product MMBT2222AGH 1 2 3 sot-23 rating unit characteristic collector-emitter voltage vdc collector-base voltage vdc emitter-base voltage vdc collector current-continuous symbol v ceo v cbo v ebo i c value 40 75 6.0 600 madc characteristic total device dissipation fr-5 board (1) t a =25 o c derate above 25 o c total device dissipation alumina substrate, (2) t a =25 o c derate above 25 o c thermal resistance junction to ambient maximum ratings thermal characteristics electrical characteristics (t a =25 o c unless otherwise noted) off characteristics thermal resistance junction to ambient junction and storage temperature emitter - base breakdowe voltage ( i e =10 uadc, i c =0 ) collector cutoff current ( v cb =60 vdc, i e =0 ) ( v cb =60 vdc, i e =0, t a =125 o c ) collector-emitter breakdowe voltage ( i c =10madc, i b=0 ) emitter cutoff current ( v eb =3.0 vdc, i c =0 ) unit vdc collector-emitter breakdowe voltage ( i c =10uadc, i e=0 ) vdc vdc uadc nadc collector cutoff current ( v ce =60 vdc, v eb (off) =3.0 vdc ) symbol v (br)ebo v (br)ceo i cbo i ebo i bl v (br)cbo i cex min. 6.0 40 - - - - 75 - max. - - 0.01 10 100 20 - 10 nadc nadc base cutoff current ( v ce =60 v, v eb (off) =3.0 vdc ) max. 225 1.8 300 2.4 556 417 -55 to +150 unit mw mw / o c mw mw / o c o c / w o c / w o c symbol p d p d r ja r ja t j, t stg zowie t echnology corporation rev . 0 (1) fr-5=1.0 x 0.75 x 0.062in. (2) alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. 1 2 3 emitter base collector
zowie technology corporation characteristic symbol min. max. unit electrical characteristics (t a =25 o c unless otherwise noted) (continued) h fe 35 50 75 35 100 50 40 - - - - 300 - - - on characteristics (3) v ce (sat) vdc dc current gain ( i c =0.1 madc, v ce= 10 vdc ) ( i c =1.0 madc, v ce= 10 vdc ) ( i c =10 madc, v ce= 10 vdc ) ( i c =10 madc, v ce= 10 vdc, t a =-55 o c ) ( i c =150 madc, v ce= 10 vdc ) (3) ( i c =150 madc, v ce= 1.0 vdc ) (3) ( i c =500 madc, v ce= 10 vdc ) (3) collector-emitter saturation voltage (3) ( i c =150 madc, i b =15 madc ) ( i c =500 madc, i b =50 madc ) - - 0.3 1.0 v be (sat) vdc base-emitter saturation voltage (3) ( i c =150 madc, i b =15 madc ) ( i c =500 madc, i b =50 madc ) 0.6 - 1.2 2.0 f t c obo 300 - - 8.0 mh z small-signal characteristic c ibo pf pf current-gain-bandwidth product (4) ( i c =20 madc, v ce =20 vdc, f=100 mh z ) output capacitance ( v cb =10 vdc, i e =0, f=1.0 mh z ) input capacitance ( v eb =0.5 vdc, i c =0, f=1.0 mh z ) input impedance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) ( v ce =10 vdc, i c =10 madc, f=1.0 kh z ) - 25 h ie k ohms 2.0 0.25 8.0 1.25 voltage feedback ratio ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) ( v ce =10 vdc, i c =10 madc, f=1.0 kh z ) h re x 10 -4 - - 8.0 4.0 small-signal current gain ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) ( v ce =10 vdc, i c =10 madc, f=1.0 kh z ) h fe - 50 75 300 375 output admittance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) ( v ce =10 vdc, i c =10 madc, f=1.0 kh z ) h oe u mhos 5.0 25 35 200 collector base time constant ( v cb =10 vdc, i c =100 uadc, r s = 1.0 k ohms, f=1.0 kh z ) delay time rise time storage time fall time ( v cc =30 vdc, v be (off) = -0.5 vdc, i c =150 madc, i b1 = 15 madc ) ( v cc =30 vdc, i c = 150 madc, i b1 =i b2 = 15 madc ) rb, cc ps - 150 noise figure ( v ce =10 vdc, i c =100 uadc, r s =1.0 k ohm, f=1.0 kh z ) n f db - 4.0 td tf - - 10 60 tr - 25 ns ts - 225 switching characteristics ns zowie t echnology corporation rev . 0 (3) pulse test : pulse width 300 us, duty cycle 2.0%. (2) ft is defined as the frequency at which hfe extrapolates to unity.
zowie technology corporation rev . 0 zowie technology corporation figure 4. collector saturation region i b , base current ( ma ) v ce , collector emitter voltage (volts) figure 3. dc current gain i c , collector current ( ma ) h fe , dc current gain figure 1. turn-on time figure 2. turn-off time 1.0 k 1n914 +30 v 200 1.0 k c s * < 10 pf* < 2.0 ns < 20 ns -4.0v -2.0 v -14 v 1.0 to 100 us, duty cycle = 2% 1.0 to 100 us, duty cycle = 2% +16 v +16 v 0 0 scope rise time < 4.0 ns * total shunt capacitance of test jig and connectors switching time equivalent test circuits +30 v 200 c s * < 10 pf* 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 MMBT2222AGH
zowie technology corporation rev . 0 zowie technology corporation MMBT2222AGH figure 5. turn - on time i c , collector current ( ma ) figure 7. frequency effects figure 8. source resistance effects i c , collector current ( ma ) t, time ( ns ) t, time ( ns ) f, frequency ( kh z ) nf, noise figure ( db ) r s , source resistance (ohms) figure 9. capacitances reverse voltage ( volts ) capacitance ( pf ) figure 10. current-gain bandwidth product i c , collector current ( ma ) t t , current-gain-bandwidth product(mh z ) figure 6. turn - off time nf, noise figure ( db ) 70 100 200 50 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 3.0 2.0 300 500 t j = 25 o c i c/b = 10 t r @ v cc =30v t d @ v eb(off) =2.0v t d @ v eb(off) =0 500 5.0 7.0 10 20 30 50 70 100 200 300 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc =30 v i c /i b =10 i b1 =i b1 t j = 25 o c 4.0 6.0 8.0 10 2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 0.01 0.02 0.05 i c =1.0ma, r s =150 500ua, r s =200 100ua, r s =2.0k 50ua, r s =4.0k i c =50ua f=1.0khz r s =optimum source resistance 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k 500ua 100ua 1.0ma 3.0 5.0 7.0 10 2.0 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 20 30 c eb c cb 70 100 200 300 50 500 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 t a = 25 o c v ce = 10 v
zowie technology corporation rev . 0 zowie technology corporation figure 11. " on " voltage i c , collector current ( ma ) i c , collector current ( ma ) v, voltage ( volts ) coefficient ( mv / o c ) figure 12. temperature coefficients 0.4 0.6 0.8 1.0 0.2 0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k t j = 25 o c 1.0 v v be(sat) @ i c/ i b =10 v ce(sat) @ i c/ i b =10 v be(on) @ v ce =10v -0.5 0 +0.5 -1.0 -1.5 -2.5 -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 r vc for v ce (sat) r vb for v be MMBT2222AGH
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